Author Affiliations
Abstract
1 Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, United Kingdom
2 Institute of Photonic Integration, Eindhoven University of Technology, Eindhoven 5600 MB, The Netherlands
3 QD Laser, Inc., Kawasaki 210-0855, Japan
4 Centre for Photonics Systems, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
5 e-mail: z.cao@tue.nl
Semiconductor mode-locked lasers (MLLs) are promising frequency comb sources for dense wavelength-division-multiplexing (DWDM) data communications. Practical data communication requires a frequency-stable comb source in a temperature-varying environment and a minimum tone spacing of 25 GHz to support high-speed DWDM transmissions. To the best of our knowledge, however, to date, there have been no demonstrations of comb sources that simultaneously offer a high repetition rate and stable mode spacing over an ultrawide temperature range. Here, we report a frequency comb source based on a quantum dot (QD) MLL that generates a frequency comb with stable mode spacing over an ultrabroad temperature range of 20–120°C. The two-section passively mode-locked InAs QD MLL comb source produces an ultra-stable fundamental repetition rate of 25.5 GHz (corresponding to a 25.5 GHz spacing between adjacent tones in the frequency domain) with a variation of 0.07 GHz in the tone spacing over the tested temperature range. By keeping the saturable absorber reversely biased at -2 V, stable mode-locking over the whole temperature range can be achieved by tuning the current of the gain section only, providing easy control of the device. At an elevated temperature of 100°C, the device shows a 6 dB comb bandwidth of 4.81 nm and 31 tones with >36 dB optical signal-to-noise ratio. The corresponding relative intensity noise, averaged between 0.5 GHz and 10 GHz, is -146 dBc/Hz. Our results show the viability of the InAs QD MLLs as ultra-stable, uncooled frequency comb sources for low-cost, large-bandwidth, and low-energy-consumption optical data communications.
Photonics Research
2020, 8(12): 12001937
Author Affiliations
Abstract
1 Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
2 State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
3 Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot (FP) lasers have achieved a room-temperature continuous-wave (CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than 150 dB/Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over 13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.
Photonics Research
2018, 6(11): 11001062

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